𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Interface studies of the MOS-structure by transfer-admittance measurements

✍ Scribed by Jan Koomen

Publisher
Elsevier Science
Year
1974
Tongue
English
Weight
716 KB
Volume
17
Category
Article
ISSN
0038-1101

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Capacitance measurements on SiC MOS stru
Capacitance measurements on SiC MOS structures for the determination of interface properties
✍ Mahdad Sadeghi; Olof Engström 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 284 KB

C-V characteristics of metal-insulator-semiconductor (MIS) structures based on 6H-SiC are investigated. These characteristics are influenced by non-equilibrium charge carrier conditions at the insulator-semiconductor interface. Depending on the sweep rate of the bias voltage the traps exhibit either