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Interface state density measurement in MOS structures by analysis of the thermally stimulated conductance

✍ Scribed by A. de Dios; E. Castán; L. Bailón; J. Barbolla; M. Lozano; E. Lora-Tamayo

Publisher: Elsevier Science
Year: 1990
Tongue: English
Weight: 576 KB
Volume: 33
Category: Article
ISSN: 0038-1101
DOI: 10.1016/0038-1101(90)90208-v

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