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Interface studies of metal-semiconductor contacts by means of SIMS, nuclear reaction and RBS

✍ Scribed by J.P. Ponpon; J.J. Grob; A. Grob; R. Stuck; P. Siffert

Publisher
Elsevier Science
Year
1978
Weight
411 KB
Volume
149
Category
Article
ISSN
0029-554X

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A 200 nm Ti Ðlm was deposited on a polished AlN ceramic substrate at 200 Γ„C by electron beam evaporation and then annealed under high vacuum conditions. The MCs'-SIMS technique (detecting MCs' secondary ions under Cs' primary ion bombardment, where M is the element to be analysed), RBS and x-ray di