Studies of interface states of silicon metal-oxide-semiconductor devices by dynamic conductance and noise measurements and effects of bias-temperature stresses

✍ Scribed by K.L. Ngai; S.T. Liu

• Publisher: Elsevier Science
• Year: 1982
• Tongue: English
• Weight: 610 KB
• Volume: 93
• Category: Article
• ISSN: 0040-6090
• DOI: 10.1016/0040-6090(82)90138-9