Study on interfacial reaction of Ti/AlN by SIMS, RBS and XRD

✍ Scribed by Yue, Ruifeng; Wang, Yan; Wang, Youxiang; Chen, Chunhua

• Publisher: John Wiley and Sons
• Year: 1999
• Tongue: English
• Weight: 130 KB
• Volume: 27
• Category: Article
• ISSN: 0142-2421
• DOI: 10.1002/(sici)1096-9918(199902)27:2<98::aid-sia476>3.0.co;2-1

✦ Synopsis

A 200 nm Ti Ðlm was deposited on a polished AlN ceramic substrate at 200 ÄC by electron beam evaporation and then annealed under high vacuum conditions. The MCs'-SIMS technique (detecting MCs' secondary ions under Cs' primary ion bombardment, where M is the element to be analysed), RBS and x-ray di †raction (XRD) measurements were employed to probe the solid interfacial reaction between Ti and AlN from 200 ÄC to 850 ÄC, and the variation of interfacial composition distribution with annealing temperature and time was given. Ternary aluminides were discovered and the formation and development of the aluminides were observed in the interfacial region. The results indicate that the MCs'-SIMS technique is an e †ective method to study the interfacial reaction between metal and ceramic.