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Interface state effects in Pd-gate mos hydrogen sensors

✍ Scribed by N.J. Evans; M.C. Petty; G.G. Roberts


Book ID
107927624
Publisher
Elsevier Science
Year
1986
Weight
779 KB
Volume
9
Category
Article
ISSN
0250-6874

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The hydrogen sensitivity of palladium MOS sensors in an oxygen-containing atmosphere is shown to depend on the area of the Pd film, the rate of the gas flow, the total pressure and the type of carrier gas. All observations can be explained by the influence of a limited mass transfer in the gas phase