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The effect of hydrogen-induced interface traps on a titanium dioxide-based palladium gate MOS capacitor (Pd-MOSC): a conductance study

✍ Scribed by D. Dwivedi; R. Dwivedi; S.K. Srivastava


Book ID
108361591
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
471 KB
Volume
29
Category
Article
ISSN
0026-2692

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