Investigation of back gate interface states by drain current hysteresis in PD-SOI n-MOSFETs

Temperature dependence of drain current

Temperature dependence of drain current hysteresis in FD and PD-SOI n-MOSFETs

✍ K. Hayama; K. Takakura; H. Ohyama; J.M. Rafí; A. Mercha; E. Simoen; C. Claeys 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 175 KB

The hysteresis characteristics of the drain current (I D ) in FD-SOI n-MOSFETs are examined at different back gate voltage and temperature. The relationship between the hysteresis and the temperature is discussed in comparison with the result for PD-SOI n-MOS-FETs, taking into account the back gate