✦ LIBER ✦

Interface Recombination Current in Type II Heterostructure Bipolar Diodes

✍ Scribed by Grundmann, Marius; Karsthof, Robert; von Wenckstern, Holger

Book ID: 126592513
Publisher: American Chemical Society
Year: 2014
Tongue: English
Weight: 452 KB
Volume: 6
Category: Article
ISSN: 1944-8244
DOI: 10.1021/am504454g

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Recombination current in GaAs/AlGaAs het

Recombination current in GaAs/AlGaAs heterostructure bipolar transistors

✍ A. C. IRVINE and R. C. WOODS, 📂 Article 📅 1997 🏛 Taylor and Francis Group 🌐 English ⚖ 321 KB

Surface recombination current in InGaP/G

Surface recombination current in InGaP/GaAs heterostructure-emitter bipolar transistors

✍ Yang, Y.F.; Hsu, C.C.; Yang, E.S. 📂 Article 📅 1994 🏛 IEEE 🌐 English ⚖ 464 KB

Interfaces and recombination currents in

Interfaces and recombination currents in Schottky barrier diodes

✍ P.H. Ladbrooke 📂 Article 📅 1972 🏛 Elsevier Science 🌐 English ⚖ 176 KB

Interface-induced phenomena in type II a

Interface-induced phenomena in type II antimonide-arsenide heterostructures

✍ Mikhailova, M.P.; Moiseev, K.D.; Berezovets, Y.A.; Parfeniev, R.V.; Bazhenov, N. 📂 Article 📅 1998 🏛 The Institution of Electrical Engineers 🌐 English ⚖ 605 KB

Interface recombination in P-type GaAs-(

Interface recombination in P-type GaAs-(AlGa)As quantum well heterostructures

✍ G. Duggan; H.I. Ralph; R.J. Elliott 📂 Article 📅 1985 🏛 Elsevier Science 🌐 English ⚖ 293 KB

Distribution of recombination currents i

Distribution of recombination currents in the space charge region of heterostructure bipolar devices

✍ Pallares, J.; Marsal, L.F.; Correig, X.; Calderer, J.; Alcubilla, R. 📂 Article 📅 1998 🏛 IEEE 🌐 English ⚖ 276 KB