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Interface-induced phenomena in type II antimonide-arsenide heterostructures

✍ Scribed by Mikhailova, M.P.; Moiseev, K.D.; Berezovets, Y.A.; Parfeniev, R.V.; Bazhenov, N.L.; Smirnov, V.A.; Yakovlev, Yu.P.

Book ID
114455730
Publisher
The Institution of Electrical Engineers
Year
1998
Tongue
English
Weight
605 KB
Volume
145
Category
Article
ISSN
1350-2433

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Positive and negative luminescence was observed in a type II broken-gap p-InAs/p-GaAsSb heterostructure in the mid-infrared spectral range 3-5 m at room temperature. Interface-related radiative recombination was provided by Mn acceptor states on InAs surface. I-V characteristics behavior was discuss