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Interface recombination in P-type GaAs-(AlGa)As quantum well heterostructures

โœ Scribed by G. Duggan; H.I. Ralph; R.J. Elliott


Publisher
Elsevier Science
Year
1985
Tongue
English
Weight
293 KB
Volume
56
Category
Article
ISSN
0038-1098

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Single quantum wells (SQWs) of GaAs 3 nm thick between wide AlAs confining layers were studied by scanning electron microscope cathodoluminescence (CL) and high resolution transmission electron microscopy (HREM). It was found that the CL emission band changed from a single gaussian owing to the indi