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Interface properties of MIS structures prepared by plasma oxidation of n-InP

✍ Scribed by Bouchikhi, B; Michel, C; Valmont, G; Ravelet, S; Lepley, B


Book ID
121880251
Publisher
Institute of Physics
Year
1986
Tongue
English
Weight
577 KB
Volume
1
Category
Article
ISSN
0268-1242

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The dependence on bias of the photoluminescence (PL) intensity of Schottky diodes and oxidized structures obtained by multipolar plasma oxidation of n-lnP was compared. For the oxidized structures, the calculated PL intensity curve remained well below the experimental results. This fact is attribute