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Properties of MIS structures prepared on InGaAsSb quaternary solutions by anodic oxidation

✍ Scribed by A.Y. Polyakov; A.G. Milnes; N.B. Smirnov; E.A. Kozhukhova; L.V. Druzhinina; A.V. Govorkov; L.M. Dolginov; I.V. Tunitskaya

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