Photoluminescence characterization of structures obtained by multipolar plasma oxidation of InP

✍ Scribed by A. Bath; A. Ahaitouf; B. Lepley; M. Belmahi; M. Remy; S. Ravelet

• Book ID: 103954413
• Publisher: Elsevier Science
• Year: 1993
• Tongue: English
• Weight: 384 KB
• Volume: 20
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(93)90416-k

✦ Synopsis

The dependence on bias of the photoluminescence (PL) intensity of Schottky diodes and oxidized structures obtained by multipolar plasma oxidation of n-lnP was compared. For the oxidized structures, the calculated PL intensity curve remained well below the experimental results. This fact is attributed to a limited swing of the surface Fermi level of the semiconductor. The flat band voltage was also deduced from PL measurements, and the corresponding barrier height ~,= 0.4 eV is in good agreement with the value inferred from current-voltage results for the Schottky diode. For the oxidized structures there was a difference in ~ deduced using the two methods. The presence of the thin oxide layer must at least be considered to explain these different apparent barrier heights.