𝔖 Bobbio Scriptorium
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Characterization of the InP surface by photoluminescence imaging

✍ Scribed by Garrigues, M. ;Krawczyk, S. K.


Book ID
105379129
Publisher
John Wiley and Sons
Year
1986
Tongue
English
Weight
219 KB
Volume
94
Category
Article
ISSN
0031-8965

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The dependence on bias of the photoluminescence (PL) intensity of Schottky diodes and oxidized structures obtained by multipolar plasma oxidation of n-lnP was compared. For the oxidized structures, the calculated PL intensity curve remained well below the experimental results. This fact is attribute