Passivation of InP surfaces controlled by photoluminescence measurements
✍ Scribed by J.Y. Longère; K. Schohe; S.K. Krawczyk; R. Schütz; H.L. Hartnagel
- Publisher
- Elsevier Science
- Year
- 1989
- Tongue
- English
- Weight
- 570 KB
- Volume
- 39
- Category
- Article
- ISSN
- 0169-4332
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## Abstract The effects of various surface preparation procedures, including chemical treatments in HF, HNO~3~, __o__‐H~3~PO~4~ and H~2~SO~4~ solutions and anodic oxidation, on the passivating properties of InP have been investigated in order to optimize the fabrication procedures of __n__^+^__p__
Loss of carriers by recombination at surfaces and interfaces of GaAs not only degrades the characteristics of minority-carrier injection devices but also reduces the device lifetime. This has impeded the development of GaAs technology. Therefore, various attempts have been made to find surface passi