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Interface Electron Traps as a Source of Anomalous Capacitance in AlGaN/GaN Heterostructures

✍ Scribed by Osvald, J.

Book ID: 120217325
Publisher: Springer US
Year: 2013
Tongue: English
Weight: 393 KB
Volume: 42
Category: Article
ISSN: 0361-5235
DOI: 10.1007/s11664-013-2553-8

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