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Interface and material characterization of thin Al2O3 layers deposited by ALD using TMA/H2O

✍ Scribed by Gosset, L. G. (author);Damlencourt, J. F. (author);Renault, O. (author);Rouchon, D. (author);Holliger, Ph (author);Ermolieff, A. (author);Trimaille, I. (author);Ganem, J. J. (author);Martin, F. (author);Séméria, M. N. (author)

Book ID
117145721
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
354 KB
Volume
303
Category
Article
ISSN
0022-3093

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## Abstract Al~2~O~3~ films 1 to 20 nm thick were deposited as alternative high‐κ gate dielectric on hydrogen‐terminated silicon by Atomic Layer Deposition (ALD) and characterized by Synchrotron X‐ray Photoelectron Spec‐troscopy (SXPS), Fourier Transform Infrared (FTIR) absorption spectroscopy and