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Interaction of GaN epitaxial layers with atomic hydrogen

✍ Scribed by M. Losurdo; M.M. Giangregorio; P. Capezzuto; G. Bruno; G. Namkoong; W.A. Doolittle; A.S. Brown


Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
378 KB
Volume
235
Category
Article
ISSN
0169-4332

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## Ε½ . Ε½ . Atomic layer epitaxy ALE of cubic-GaN on GaAs 001 substrates is tried by alternate supply of GaCl and NH , and 3 ## Ε½ . the growth process is monitored in situ using gravimetric monitoring GM method. It is found that one monolayer Ε½ . ML rcycle growth of a pure cubic-GaN is possible