In situ gravimetric monitoring of halogen transport atomic layer epitaxy of cubic-GaN

✍ Scribed by Yoshinao Kumagai; Miho Mayumi; Akinori Koukitu; Hisashi Seki

• Publisher: Elsevier Science
• Year: 2000
• Tongue: English
• Weight: 450 KB
• Volume: 159-160
• Category: Article
• ISSN: 0169-4332
• DOI: 10.1016/s0169-4332(00)00120-3

✦ Synopsis

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. Ž . Atomic layer epitaxy ALE of cubic-GaN on GaAs 001 substrates is tried by alternate supply of GaCl and NH , and 3

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. the growth process is monitored in situ using gravimetric monitoring GM method. It is found that one monolayer Ž . ML rcycle growth of a pure cubic-GaN is possible when the growth is performed at 4008C on 25-nm-thick GaN buffer Ž . Ž . layerrGaAs 001 substrate. On the other hand, three-dimensional 3D growth occurs when the growth is performed directly on GaAs substrate, and crystallinity of the grown layer is amorphous.