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Interaction kinetics of As4 and Ga on {100} GaAs surfaces using a modulated molecular beam technique

โœ Scribed by C.T. Foxon; B.A. Joyce

Book ID
118981043
Publisher
Elsevier Science
Year
1975
Tongue
English
Weight
977 KB
Volume
50
Category
Article
ISSN
0039-6028

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Silicon and carbontetrabromide were used as dopant sources in the growth of GaAs/GaAs and Gao.47Inf).s3As/ lnP structures. We studied the incorporation behaviour of these group IV atoms on (100) and {111} surfaces as a function of growth temperature. The free carrier concentrations determined by Hal