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The temporal behaviour of reflection-high-energy-electron-diffraction intensity and implications for growth kinetics during molecular beam epitaxial growth of GaAs/AlxGa1−xAs(100) modulated structures

✍ Scribed by T.C. Lee; M.Y. Yen; P. Chen; A. Madhukar


Publisher
Elsevier Science
Year
1986
Weight
132 KB
Volume
174
Category
Article
ISSN
0167-2584

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