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The effect of As on Al and Ga segregation during the codeposition of Al, Ga and As on a GaAs(100) surface: kinetic simulations

✍ Scribed by Yan-Ten Lu; Horia Metiu

Publisher
Elsevier Science
Year
1991
Weight
67 KB
Volume
254
Category
Article
ISSN
0167-2584

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Growth dynamics of GaAs, AlAs and (Al, G
Growth dynamics of GaAs, AlAs and (Al, Ga)As on GaAs (110) and (111)A substrates during molecular beam epitaxy
✍ B. A. Joyce; J. H. Neave; M. R. Fahy; K. Sato; D. M. Holmes; J. G. Belk; J. L. S πŸ“‚ Article πŸ“… 1996 πŸ› Springer US 🌐 English βš– 816 KB

The growth dynamics of GaAs, AlAs and (AI, Ga)As films grown by molecular beam epitaxy (MBE) on GaAs (11 0) and (1 11)Asubstrates have been studied using reflection high energy electron diffraction (RHEED) intensity oscillations and scanning tunnelling microscopy (STM). In contrast to growth on (0 0