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Intense terahertz emission from undoped GaAs/n-type GaAs and

✍ Scribed by E. Estacio; S. Takatori; M. H. Pham; T. Yoshioka; T. Nakazato; M. Cadatal-Raduban; T. Shimizu; N. Sarukura; M. Hangyo; C. T. Que; M. Tani; T. Edamura; M. Nakajima; J. V. Misa; R. Jaculbia; A. Somintac; A. Salvador

Publisher
Springer
Year
2011
Tongue
English
Weight
339 KB
Volume
103
Category
Article
ISSN
0721-7269

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Impact of n-type doping on the terahertz
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✍ Polyakov, V. M. ;Cimalla, V. ;Lebedev, V. ;Schwierz, F. πŸ“‚ Article πŸ“… 2010 πŸ› John Wiley and Sons 🌐 English βš– 283 KB

## Abstract We theoretically investigate the influence of n‐type doping on the terahertz (THz) electric field emission from unbiased __c__‐plane InN surfaces using the ensemble Monte Carlo (MC) method. It is shown that the increase of n‐type doping has twofold effect on the THz surface emission. Th