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Doping dependence of the linewidth of spontaneous emission from electron-beam-excited n-type GaAs at 300°K

✍ Scribed by S. Rakshit; S.N. Biswas; A.N. Chakravarti


Publisher
Elsevier Science
Year
1971
Tongue
English
Weight
136 KB
Volume
37
Category
Article
ISSN
0375-9601

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