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Impact of n-type doping on the terahertz surface emission from c-plane InN

✍ Scribed by Polyakov, V. M. ;Cimalla, V. ;Lebedev, V. ;Schwierz, F.


Publisher
John Wiley and Sons
Year
2010
Tongue
English
Weight
283 KB
Volume
207
Category
Article
ISSN
0031-8965

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✦ Synopsis


Abstract

We theoretically investigate the influence of n‐type doping on the terahertz (THz) electric field emission from unbiased c‐plane InN surfaces using the ensemble Monte Carlo (MC) method. It is shown that the increase of n‐type doping has twofold effect on the THz surface emission. The detrimental effect of electron drift mobility decrease is compensated by doping‐derived electrons constructively contributing to the total dynamic dipole responsible for a generation of the THz electric field pulse emission from InN surface.