Integration Challenges for Low Dielectric Constant Materials
β Scribed by H. Treichel; C. Goonetilleke
- Publisher
- John Wiley and Sons
- Year
- 2001
- Tongue
- English
- Weight
- 315 KB
- Volume
- 3
- Category
- Article
- ISSN
- 1438-1656
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
The more advanced an integrated circuit becomes, the more stringent are the demands for certain properties of a dielectric or insulating material. In addition, it is essential that the layer maintain its specific electrical, physical and chemical properties after incorporation in the device structur
Dielectric and ferroelectric oxides with dielectric constant in the range kE42500 have been deposited by pulsed laser deposition on (1 0 0)InP single crystal. Crystalline and textured CeO 2 , Y-stabilised zirconia (YSZ), SrTiO 3 and ZnO layers can be deposited using an incubation method to avoid InP