✦ LIBER ✦

Routes for the integration of high and low dielectric constant oxides on InP

✍ Scribed by E. Vasco; C. Zaldo

Publisher: Elsevier Science
Year: 2002
Tongue: English
Weight: 271 KB
Volume: 5
Category: Article
ISSN: 1369-8001
DOI: 10.1016/s1369-8001(02)00109-9

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✦ Synopsis

Dielectric and ferroelectric oxides with dielectric constant in the range kE42500 have been deposited by pulsed laser deposition on (1 0 0)InP single crystal. Crystalline and textured CeO 2 , Y-stabilised zirconia (YSZ), SrTiO 3 and ZnO layers can be deposited using an incubation method to avoid InP degradation. On the first three, textured Pb 1À1.5x La x TiO 3 can be deposited. Surface topography studies show that diffusion on the surface is responsible of the low YSZ roughness (so0:2% of thickness); while for ZnO two growth regimes are observed: hexagonal columns formed by shadowing and diffusion limited by step edge barriers determining the column top morphology.

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