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[Inst. Electr. Eng. Japan International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 - Yokohama, Japan (23-25 May 1995)] Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 - On-state and short circuit behaviour of high voltage trench gate IGBTs in comparison with planar IGBTs

✍ Scribed by Hotz, R.; Bauer, F.; Fichtner, W.

Book ID: 120075350
Publisher: Inst. Electr. Eng. Japan
Year: 1995
Weight: 525 KB
Category: Article
ISBN-13: 9780780326187
DOI: 10.1109/ISPSD.1995.515039

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