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[Inst. Electr. Eng. Japan International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 - Yokohama, Japan (23-25 May 1995)] Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 - A new trench gate accumulation mode field effect emitter switched thyristor

✍ Scribed by Shekar, M.S.; Korec, J.; Baliga, B.J.

Book ID: 111863119
Publisher: Inst. Electr. Eng. Japan
Year: 1995
Weight: 425 KB
Volume: 0
Category: Article
ISBN-13: 9780780326187
DOI: 10.1109/ispsd.1995.515032

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