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[Inst. Electr. Eng. Japan International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 - Yokohama, Japan (23-25 May 1995)] Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 - The ES-MGBT: a new fast switching MOS-gated power bipolar transistor with conductivity-modulation by a positive feedback mechanism

✍ Scribed by Ajit, J.S.; Kinzer, D.M.

Book ID: 111863117
Publisher: Inst. Electr. Eng. Japan
Year: 1995
Weight: 333 KB
Volume: 0
Category: Article
ISBN-13: 9780780326187
DOI: 10.1109/ispsd.1995.515027

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