𝔖 Bobbio Scriptorium

✦ LIBER ✦

[Inst. Electr. Eng. Japan International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 - Yokohama, Japan (23-25 May 1995)] Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 - Comparison of linear and circular cell dual channel emitter switched thyristors

✍ Scribed by Sridhar, S.; Baliga, B.J.

Book ID: 111863118
Publisher: Inst. Electr. Eng. Japan
Year: 1995
Weight: 417 KB
Volume: 0
Category: Article
ISBN-13: 9780780326187
DOI: 10.1109/ispsd.1995.515029

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

[Inst. Electr. Eng. Japan International

[Inst. Electr. Eng. Japan International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 - Yokohama, Japan (23-25 May 1995)] Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 - A new trench gate accumulation mode field effect emitter switched thyristor

✍ Shekar, M.S.; Korec, J.; Baliga, B.J. 📂 Article 📅 1995 🏛 Inst. Electr. Eng. Japan ⚖ 425 KB

[Inst. Electr. Eng. Japan International

[Inst. Electr. Eng. Japan International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 - Yokohama, Japan (23-25 May 1995)] Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 - 8 kV/3.6 kA light triggered thyristor

✍ Nakagawa, T.; Satoh, K.; Yamamoto, M.; Hirasawa, K.; Ohta, K. 📂 Article 📅 1995 🏛 Inst. Electr. Eng. Japan ⚖ 665 KB

[Inst. Electr. Eng. Japan International

[Inst. Electr. Eng. Japan International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 - Yokohama, Japan (23-25 May 1995)] Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 - Analysis of 4500 V double trench MOS controlled thyristor

✍ Huang, A.Q.; Amaratunga, G.; Chen, D.Y. 📂 Article 📅 1995 🏛 Inst. Electr. Eng. Japan ⚖ 627 KB

[Inst. Electr. Eng. Japan International

[Inst. Electr. Eng. Japan International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 - Yokohama, Japan (23-25 May 1995)] Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 - Over 1000 V n-ch LDMOSFET and p-ch LIGBT with JI RESURF structure and multiple floating field plate

✍ Terashima, T.; Yamashita, J.; Yamada, T. 📂 Article 📅 1995 🏛 Inst. Electr. Eng. Japan ⚖ 438 KB

[Inst. Electr. Eng. Japan International

[Inst. Electr. Eng. Japan International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 - Yokohama, Japan (23-25 May 1995)] Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 - The ES-MGBT: a new fast switching MOS-gated power bipolar transistor with conductivity-modulation by a positive feedback mechanism

✍ Ajit, J.S.; Kinzer, D.M. 📂 Article 📅 1995 🏛 Inst. Electr. Eng. Japan ⚖ 333 KB

[Inst. Electr. Eng. Japan International

[Inst. Electr. Eng. Japan International Symposium on Power Semiconductor Devices and IC's - Kyoto, Japan (3-6 June 1998)] Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212) - Trends in power discrete devices

✍ Baliga, B.J. 📂 Article 📅 1998 🏛 Inst. Electr. Eng. Japan ⚖ 629 KB