InP metal-insulator-semiconductor field-effect transistors utilizing an amorphous phosphorus gate insulator

✍ Scribed by Serreze, H.B.; Schachter, R.; Olego, D.J.; Viscogliosi, M.

• Book ID: 114595953
• Publisher: IEEE
• Year: 1987
• Tongue: English
• Weight: 261 KB
• Volume: 34
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/t-ed.1987.23018