Initial adsorption of trimethylsilane on Ge(100) surfaces

✍ Scribed by Qi, Y.; Sulak, J. L.; Durrer, W. G.; Craig, J. H.; Wang, P. W.

• Publisher: John Wiley and Sons
• Year: 1998
• Tongue: English
• Weight: 762 KB
• Volume: 26
• Category: Article
• ISSN: 0142-2421
• DOI: 10.1002/(sici)1096-9918(199802)26:2<113::aid-sia350>3.0.co;2-u

✦ Synopsis

Trimethylsilane (TMSiH) was adsorbed onto a Ge(100) surface at a temperature of Ô150 » 3 ÄC and x-ray photoelectron spectroscopy (XPS) was used to study the resulting surface species as functions of the TMSiH exposure in Langmuir (L). The core-level C 1s, Si 2p and Ge 3d photoelectrons were monitored after each dosing. It was observed that the C-C bonds are the dominant species formed at the low doses of TMSiH. The second abundant species at the low coverage is the C-Ge bond. This indicated dissociative adsorption of TMSiH molecules onto a clean Ge(100) surface, which is similar to the adsorption of TMSiH molecules onto an Si(100) surface. As the dose increases, the Si-C species gradually increase due to physisorbed TMSiH on top of the C-C-and C-Gecovered surface. This study clearly reveals the growth processes of TMSiH on a Ge(100) surface. The electronegativities of C, Si and Ge and the bond strengths of C-C, C-Si and C-Ge were invoked to discuss the initial formation of C-C and C-Ge on the Ge(100) surface.