Trimethylsilane (TMSiH) was adsorbed onto a Ge(100) surface at a temperature of ร150 ยป 3 รC and x-ray photoelectron spectroscopy (XPS) was used to study the resulting surface species as functions of the TMSiH exposure in Langmuir (L). The core-level C 1s, Si 2p and Ge 3d photoelectrons were monitore
โฆ LIBER โฆ
The Adsorption Configuration of Valine on Ge(100)
โ Scribed by Young-Sang Youn; Hangil Lee; Sehun Kim
- Publisher
- John Wiley and Sons
- Year
- 2010
- Tongue
- English
- Weight
- 231 KB
- Volume
- 11
- Category
- Article
- ISSN
- 1439-4235
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