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InGaP HBT MMIC amplifiers

Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
124 KB
Volume
16
Category
Article
ISSN
0961-1290

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Agilent's InGaP HBT MMIC technology
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## Technology: Microelectronics News Update Loea Corp has partnered with Wavestream Corp to develop high power E-band (71.0-95.0 GHz) amplifiers for use in Loea's multi-gigabit wireless communication transceivers. Loea is the first to deploy E-Band communication products that have unique last mil

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## Abstract An InGaP/GaAs heterojunction bipolar transistor (HBT) power amplifier is developed for WCDMA user equipment, specifically, band‐1‐power class‐2 application. The HBT power amplifier demonstrates maximum output power P~out~ of 29.4 dBm and power‐added efficiency (PAE) of 48% at a frequenc

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