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InGaP HBT amplifier line

Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
40 KB
Volume
17
Category
Article
ISSN
0961-1290

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## Abstract An InGaP/GaAs heterojunction bipolar transistor (HBT) power amplifier is developed for WCDMA user equipment, specifically, band‐1‐power class‐2 application. The HBT power amplifier demonstrates maximum output power P~out~ of 29.4 dBm and power‐added efficiency (PAE) of 48% at a frequenc

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