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Loea Corp has partnered with Wavestream Corp to develop high power E-band (71.0-95.0 GHz) amplifiers for use in Loea's multi-gigabit wireless communication transceivers.
Loea is the first to deploy E-Band communication products that have unique last mile access performance including high all-weather availability (99.999% at 1 km), ultra broadband data payload (1.25 Gbps) and a low overall cost of ownership compared to alternative last mile access technologies.
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## Abstract A 24โGHz singleโpole, singleโthrow (SPST) switch with high isolation is designed using InGaP/GaAs HBT process. To obtain high isolation in an off state, cascode structures are utilized and an additional shunt transistor is introduced in an output, which helps to reject a leakage signal.
Sirenza Microdevices Inc has released its SXA-3318B GaAs hetero-junction bipolar transistor (HBT) MMIC. Covering from 400MHz to 2,500MHz frequency range, the active bias, dual input/output product is a high linearity amplifier, which provides 47dBm of OIP3 and 28dBm of P1dB at 1.9GHz when combined i
In this paper, a 5-GHz fully integrated voltage-controlled oscillator (VCO) using an InP-based RTD/HBT technology is demonstrated for the first time. A figure of merit for the oscillator is obtained to be ฯช180.8 dBc/Hz. In addition, the VCO has demonstrated a wide tuning range of 710 MHz at 5 GHz.
the waveguiding property of indoor channels, such as long hallways, results in path-loss exponents of less than 2. REFERENCES
## Abstract A fully differential Xโband image rejection downโconverter is fabricated using Hartley architecture with a total chip area of 2.6 ร 1.1 mm^2^ in InGaP/GaAs HBT monolithic microwave integrated circuit technology.This downโconverter consists of two singleโbalanced mixers, a differential i