High-integrated and small-sized X-band image rejection down-converter MMIC using InGaP/GaAs HBT process
✍ Scribed by Cong Wang; Nam-Young Kim
- Publisher
- John Wiley and Sons
- Year
- 2011
- Tongue
- English
- Weight
- 448 KB
- Volume
- 53
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
A fully differential X‐band image rejection down‐converter is fabricated using Hartley architecture with a total chip area of 2.6 × 1.1 mm^2^ in InGaP/GaAs HBT monolithic microwave integrated circuit technology.This down‐converter consists of two single‐balanced mixers, a differential intermediate frequency (IF) amplifier, a local oscillator quadrature generator, a three‐stage polyphase filter, and a differential voltage‐controlled oscillator. This down‐converter yields an image rejection ratio of over 30 dB, a conversion gain of over 30 dB, a noise figure of less than 3.5 dB, and an output‐referred 1 dB compression power (P1~dB,OUT~) of 2.5 dBm in the IF range 0.9‐2 GHz. The broadband image rejection characteristics over a frequency range of 1.1 GHz with a current consumption of 35 mA are achieved. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:789–793, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25852