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InGaN/GaN quantum wells grown on freestanding HfO2 photonic crystals

✍ Scribed by Yongjin Wang; Tong Wu; Fangren Hu; Hongbo Zhu; Kazuhiro Hane

Book ID
112182230
Publisher
John Wiley and Sons
Year
2012
Tongue
English
Weight
351 KB
Volume
9
Category
Article
ISSN
1862-6351

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## Abstract InGaN/GaN quantum wells (QWs) grown at identical conditions on __m__‐plane GaN and __c__‐plane sapphire substrates were characterized by several techniques, aiming to clarify the reason for different emission wavelengths often observed in similar LED structures with __m__‐ and __c__‐pla