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InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer

✍ Scribed by L. W. Wu; S. J. Chang; Y. K. Su; T. Y. Tsai; T. C. Wen; C. H. Kuo; W. C. Lai; J. K. Sheu; J. M. Tsai; S. C. Chen; B. R. Huang

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