Nitride-based light emitting diodes with Si-doped In0.23Ga0.77N/GaN short period superlattice tunneling contact layer

✍ Scribed by Kuo, C.H.; Chang, S.J.; Su, Y.K.; Wu, L.W.; Chen, J.F.; Sheu, J.K.; Tsai, J.M.

• Book ID: 114617012
• Publisher: IEEE
• Year: 2003
• Tongue: English
• Weight: 198 KB
• Volume: 50
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2003.809435