Improvement of InGaN/GaN laser diodes by using a Si-doped In/sub 0.23/Ga/sub 0.77/N/GaN short-period superlattice tunneling contact layer

✍ Scribed by . Ru-chin Tu; . Chun-ju Tun; J. Sheu; . Wei-hong Kuo; . Te-chung Wang; . Ching-en Tsai; . Jung-tsung Hsu; J. Chi; . Gou-chung Chi

• Book ID: 125840372
• Publisher: IEEE
• Year: 2003
• Tongue: English
• Weight: 267 KB
• Volume: 24
• Category: Article
• ISSN: 0741-3106
• DOI: 10.1109/LED.2003.810889