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InGaN multiple quantum well laser diodes grown by molecular beam epitaxy

โœ Scribed by Hooper, S.E.; Kauer, M.; Bousquet, V.; Johnson, K.; Barnes, J.M.; Heffernan, J.

Book ID
121762387
Publisher
The Institution of Electrical Engineers
Year
2004
Tongue
English
Weight
224 KB
Volume
40
Category
Article
ISSN
0013-5194

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InGaN multiple quantum well lasers grown
InGaN multiple quantum well lasers grown by MBE
โœ Heffernan, J. ;Kauer, M. ;Johnson, K. ;Zellweger, C. ;Hooper, S. E. ;Bousquet, V ๐Ÿ“‚ Article ๐Ÿ“… 2005 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 198 KB

## Abstract We report progress in the development of InGaN multiple quantum well laser diodes grown by MBE. Lasers were grown by gasโ€source MBE using ammonia as the source of nitrogen. Devices were grown on both GaN template substrates with dryโ€etched laser facets, and on low dislocation density fr