## Abstract This paper reports the state of the art performance for blueβviolet laser diodes (LD) grown by molecular beam epitaxy. Improvements in device design and growth have resulted in a threshold current density of 3.6 kA/cm^2^, which translates into improved cw lifetime of up to 42 hours. Red
β¦ LIBER β¦
InGaN violet laser diodes grown by Molecular Beam Epitaxy
β Scribed by Heffernan, J. ;Kauer, M. ;Hooper, S. E. ;Bousquet, V. ;Johnson, K.
- Publisher
- John Wiley and Sons
- Year
- 2004
- Tongue
- English
- Weight
- 161 KB
- Volume
- 201
- Category
- Article
- ISSN
- 0031-8965
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