𝔖 Bobbio Scriptorium
✦   LIBER   ✦

InGaN violet laser diodes grown by Molecular Beam Epitaxy

✍ Scribed by Heffernan, J. ;Kauer, M. ;Hooper, S. E. ;Bousquet, V. ;Johnson, K.


Publisher
John Wiley and Sons
Year
2004
Tongue
English
Weight
161 KB
Volume
201
Category
Article
ISSN
0031-8965

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Performance and degradation characterist
✍ Tan, W. S. ;Kauer, M. ;Hooper, S. E. ;Smeeton, T. M. ;Bousquet, V. ;Rossetti, M. πŸ“‚ Article πŸ“… 2009 πŸ› John Wiley and Sons 🌐 English βš– 362 KB

## Abstract This paper reports the state of the art performance for blue–violet laser diodes (LD) grown by molecular beam epitaxy. Improvements in device design and growth have resulted in a threshold current density of 3.6 kA/cm^2^, which translates into improved cw lifetime of up to 42 hours. Red

Superconducting artificial lattices grow
✍ Tomoji Kawai; Masaki Kanai; Takuya Matsumoto; Hitoshi Tabata; Ken Horiuchi; Shic πŸ“‚ Article πŸ“… 1992 πŸ› Elsevier Science 🌐 English βš– 298 KB

The laser molecular beam epltaxaal technique for formang superconducting than films and artaficaal lattices is presented Tunnel junctmns, supedatlaces and tailored thin films have been formed by the layer-by-layer method using this techmque In the junction of Au/BI2Sr2CuO6/BIESr2CaCu208, reproduoble