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InGaN-based light-emitting diodes fabricated with transparent Ga-doped ZnO as ohmicp-contact

✍ Scribed by Tamura, K. ;Nakahara, K. ;Sakai, M. ;Nakagawa, D. ;Ito, N. ;Sonobe, M. ;Takasu, H. ;Tampo, H. ;Fons, P. ;Matsubara, K. ;Iwata, K. ;Yamada, A. ;Niki, S.

Book ID: 105362743
Publisher: John Wiley and Sons
Year: 2004
Tongue: English
Weight: 107 KB
Volume: 201
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.200405090

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