InGaN based light emitting diodes with Ga doped ZnO as transparent conducting oxide

✍ Scribed by Li, X. ;Liu, H. Y. ;Liu, S. ;Ni, X. ;Wu, M. ;Avrutin, V. ;Izyumskaya, N. ;Özgür, Ü. ;Morkoç, H.

• Book ID: 105366157
• Publisher: John Wiley and Sons
• Year: 2010
• Tongue: English
• Weight: 433 KB
• Volume: 207
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.201026053

✦ Synopsis

Abstract

We report on the electrical and optical properties of InGaN based light emitting diodes (LEDs) utilizing Ga doped ZnO (GZO) grown by molecular beam epitaxy (MBE) as a highly transparent contact p‐electrode (GZO‐LEDs). For comparison, the LEDs with semi‐transparent thin Ni/Au (5/5 nm) current spreading layers were also fabricated on the same wafer (Ni/Au‐LEDs). Unpackaged GZO‐LEDs with 200 µm diameter showed negligible light output degradation for up to 30 min under CW current of 100 mA (corresponding to a 318 A/cm^2^ current density), while the light output for Ni/Au‐LEDs was reduced by 85% after only 5 min of operation due to the severe current crowding effect (or current filamentation). Pulsed electroluminescence (EL) measurements revealed that the GZO‐LEDs exhibit 50% higher EL intensity for the same current levels.