InGaN based light emitting diodes with G
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Li, X. ;Liu, H. Y. ;Liu, S. ;Ni, X. ;Wu, M. ;Avrutin, V. ;Izyumskaya, N. ;Özgür,
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Article
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2010
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John Wiley and Sons
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English
⚖ 433 KB
## Abstract We report on the electrical and optical properties of InGaN based light emitting diodes (LEDs) utilizing Ga doped ZnO (GZO) grown by molecular beam epitaxy (MBE) as a highly transparent contact p‐electrode (GZO‐LEDs). For comparison, the LEDs with semi‐transparent thin Ni/Au (5/5 nm) cu