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InGaN-based 405 nm near-ultraviolet light emitting diodes on pillar patterned sapphire substrates

✍ Scribed by Törmä, Pekka T.; Ali, Muhammad; Svensk, Olli; Suihkonen, Sami; Sopanen, Markku; Lipsanen, Harri; Mulot, Mikael; Odnoblyudov, Maxim A.; Bougrov, Vladislav E.


Book ID
115468587
Publisher
Royal Society of Chemistry
Year
2010
Tongue
English
Weight
230 KB
Volume
12
Category
Article
ISSN
1466-8033

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✍ Yang, Y. ;Cao, X. A. ;Yan, C. H. 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 315 KB

## Abstract We studied the nonthermal mechanism of quantum efficiency (QE) roll‐off in InGaN‐based multiple‐quantum‐well LEDs on sapphire and bulk GaN substrates with In content ranging from 1% to 28%. Both the efficiency evolution and peak energy shift appear to be strongly dependent on the In con