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InGaAs/InP heterostructures with strained quantum wells and quantum dots (λ=1.5–1.9 µm)

✍ Scribed by Z. N. Sokolova; D. A. Vinokurov; I. S. Tarasov; N. A. Gun’ko; G. G. Zegrya


Book ID
110120181
Publisher
Springer
Year
1999
Tongue
English
Weight
43 KB
Volume
33
Category
Article
ISSN
1063-7826

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